Rochester Electronics, LLC FQU4N50TU
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FQU4N50TU
2071-FQU4N50TU
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
FQU4N50TU详情
Rochester Electronics, LLC FQU4N50TU重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
引脚数
3
Current - Continuous Drain (Id) @ 25℃
2.6A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.5W Ta 45W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tube
系列
QFET®
无铅代码
yes
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.7 Ω @ 1.3A, 10V
输入电容(Ciss)(Max)@Vds
460pF @ 25V
门极电荷(Qg)(最大)@Vgs
13nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±30V
达到SVHC
unknown
RoHS状态
ROHS3 Compliant
FQU4N50TU拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics








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