ROHM R6002ENHTB1

包装/外壳

SOP-8

安装类型

表面贴装

供应商器件包装

8-SOP

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

6.5 nC

Rds On - Drain-Source Resistance

3.4 Ohms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

2 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

2W (Ta)

Product Status

活跃

包装

切割胶带

操作温度

150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.4Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

65 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

6.5 nC @ 10 V

上升时间

16 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET