ROHM Semiconductor 2SA2018E3TL
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2SA2018E3TL
2078-2SA2018E3TL
晶体管 - 双极性晶体管(BJT)- 单个
SOT-416-3
大陆
立即发货

Bipolar Transistors - BJT
--最小包装量--
2SA2018E3TL详情
ROHM Semiconductor 2SA2018E3TL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-416-3
Collector- Emitter Voltage VCEO Max
12 V
Collector-Emitter Saturation Voltage
100 mV
DC Collector/Base Gain hfe Min
270
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
260 MHz
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Pd - Power Dissipation
150 mW
Transistor Polarity
PNP
技术
Si
配置
Single
集电极基极电压(VCBO)
15 V
2SA2018E3TL拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor







哦! 它是空的。