ROHM Semiconductor 2SAR502E3HZGTL
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2SAR502E3HZGTL
2078-2SAR502E3HZGTL
晶体管 - 双极性晶体管(BJT)- 单个
SOT-416-3
大陆
立即发货

Bipolar Transistors - BJT Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
--最小包装量--
2SAR502E3HZGTL详情
ROHM Semiconductor 2SAR502E3HZGTL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-416-3
安装类型
表面贴装
供应商器件包装
EMT3
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
30 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
150 mV
Maximum DC Collector Current
1 A
Pd - Power Dissipation
150 mW
Gain Bandwidth Product fT
520 MHz
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
200 at - 100 mA, -2 V
DC Current Gain hFE Max
500 at - 100 mA, -2 V
Factory Pack QuantityFactory Pack Quantity
3000
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max)
500 mA
Base Product Number
2SAR502
厂商
Rohm Semiconductor
Product Status
活跃
包装
MouseReel
操作温度
150°C (TJ)
系列
Automotive, AEC-Q101
配置
Single
功率 - 最大
150 mW
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
200 @ 100mA, 2V
最大集极截止电流
200nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
400mV @ 10mA, 200mA
电压 - 集射极击穿(最大值)
30 V
频率转换
520MHz
集电极基极电压(VCBO)
30 V
连续集电极电流
0.5 A
2SAR502E3HZGTL拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
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