ROHM Semiconductor 2SC4102U3T106R

包装/外壳

SOT-323-3

安装类型

表面贴装

供应商器件包装

UMT3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

120 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

500 mV

Maximum DC Collector Current

50 mA

Pd - Power Dissipation

200 mW

Gain Bandwidth Product fT

140 MHz

Minimum Operating Temperature

-

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

180

DC Current Gain hFE Max

560

Factory Pack QuantityFactory Pack Quantity

3000

Emitter-Base Voltage

5(V)

Operating Temperature Classification

Military

Package Type

UMT

Collector-Base Voltage

120(V)

Category

双极小信号

Operating Temp Range

-55C to 150C

Collector Current (DC)

0.05(A)

Number of Elements

1

Rad Hardened

无

DC Current Gain

180@2MA@6V

Mounting

表面贴装

Package

Tape & Reel (TR)

Current-Collector (Ic) (Max)

50 mA

Base Product Number

2SC4102

厂商

Rohm Semiconductor

Product Status

活跃

Number of Elements per Chip

1

Dimensions

2.1 x 1.35 x 0.9mm

Maximum Collector Emitter Voltage

120 V

Maximum Operating Frequency

140 MHz

包装

MouseReel

操作温度

150°C (TJ)

系列

-

频率

140(MHz)

引脚数量

3

配置

Single

功率耗散

0.2(W)

输出功率

Not Required(W)

功率 - 最大

200 mW

晶体管类型

PNP

最小直流增益（hFE）@ Ic, Vce

390 @ 500mA, 6V

最大集极截止电流

500nA (ICBO)

不同 Ib, Ic 时 Vce 饱和度（最大值）

500mV @ 50mA, 1A

电压 - 集射极击穿（最大值）

120 V

集电极基极电压(VCBO)

120 V

连续集电极电流

50 mA