ROHM Semiconductor 2SC4617E3TLQ

包装/外壳

SOT-416-3

Collector- Emitter Voltage VCEO Max

50 V

Collector-Emitter Saturation Voltage

400 mV

DC Collector/Base Gain hfe Min

120

Emitter- Base Voltage VEBO

7 V

Gain Bandwidth Product fT

180 MHz

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Pd - Power Dissipation

150 mW

Transistor Polarity

NPN

技术

Si

配置

Single

集电极基极电压(VCBO)

60 V