ROHM Semiconductor 2SC5585E3TL

包装/外壳

SOT-416-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

150 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

270

Collector-Emitter Saturation Voltage

90 mV

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

320 MHz

Collector- Emitter Voltage VCEO Max

12 V

技术

Si

配置

Single

集电极基极电压(VCBO)

15 V