Rohm Semiconductor 2SCR587D3TL1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

厂商

Rohm Semiconductor

Product Status

活跃

Current-Collector (Ic) (Max)

3 A

Emitter-Base Voltage

6(V)

Operating Temperature Classification

Military

Package Type

DPAK

Transistor Polarity

NPN

Collector-Base Voltage

120(V)

Category

双极电源

Operating Temp Range

-55C to 150C

Collector Current (DC)

3(A)

Number of Elements

1

Rad Hardened

无

DC Current Gain

120@100MA@5V

Mounting

表面贴装

Number of Elements per Chip

1

Maximum Collector Emitter Voltage

120 V

Maximum DC Collector Current

3 A

Minimum DC Current Gain

120

MSL

MSL 1 - Unlimited

Qualification

-

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

10 W

Maximum Operating Temperature

+ 150 C

Collector-Emitter Saturation Voltage

60 mV

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

250 MHz

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

DC Current Gain hFE Max

390 at 100 mA, 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

120 V

系列

-

操作温度

150°C (TJ)

包装

卷带

子类别

Transistors

技术

Si

频率

250(MHz)

引脚数量

2 +Tab

配置

Single

功率耗散

10(W)

输出功率

Not Required(W)

功率 - 最大

10 W

产品类别

BJTs - Bipolar Transistors

晶体管类型

NPN

最小直流增益（hFE）@ Ic, Vce

120 @ 100mA, 5V

最大集极截止电流

1μA (ICBO)

不同 Ib, Ic 时 Vce 饱和度（最大值）

120mV @ 100mA, 1A

电压 - 集射极击穿（最大值）

120 V

转换频率

250MHz

频率转换

250MHz

集电极基极电压(VCBO)

120 V

连续集电极电流

3A

产品类别

Bipolar Transistors - BJT