ROHM Semiconductor BC847BMGT116
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BC847BMGT116
2078-BC847BMGT116
晶体管 - 双极性晶体管(BJT)- 单个
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BC847BMGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at utmel
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BC847BMGT116详情
ROHM Semiconductor BC847BMGT116重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
VCBO
-60V
VEBO
-5V
Characteristic frequency fT
200MHz
DC current gain hFE
100
Collector-emitter saturation voltage
-1.6V
Collector continuous current
-600mA
Collector-emitter maximum voltage VCEO
-60V
Power dissipation Pd
225mW
Package/Enclosure
SOT-23
Operating temperature
-55℃~150℃
fet type
PNP
BC847BMGT116拓展信息
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