ROHM Semiconductor BSM120C12P2C201

工厂交货时间

17 Weeks

包装/外壳

Module

安装类型

底座安装

供应商器件包装

Module

Continuous Drain Current Id

134

Continuous Drain Current

134(A)

Drain-Source On-Volt

1200(V)

Operating Temperature Classification

汽车

Operating Temp Range

-40C to 175C

Gate-Source Voltage (Max)

22(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

Screw

Vr - Reverse Voltage

1200 V

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

935 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 6 V, + 22 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

12

Mounting Styles

螺钉安装

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

RoHS

Details

Typical Turn-Off Delay Time

165 ns

Id - Continuous Drain Current

134 A

Package

Bulk

Base Product Number

BSM120

Current - Continuous Drain (Id) @ 25℃

134A (Tc)

厂商

Rohm Semiconductor

Product Status

活跃

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSM120C12P2C201

Part Life Cycle Code

活跃

Ihs Manufacturer

ROHM CO LTD

Risk Rank

2.3

包装

Tray

操作温度

-40°C ~ 150°C (TJ)

系列

-

类型

功率MOSFET

子类别

Discrete Semiconductor Modules

技术

SiC

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

10

工作电源电压

-

极性

N

功率耗散

935

功率 - 最大

935W (Tc)

场效应管类型

2 N-Channel

Rds On(Max)@Id,Vgs

-

不同 Id 时 Vgs(th)（最大值）

4V @ 22mA

输入电容(Ciss)(Max)@Vds

14000pF @ 10V

门极电荷(Qg)(最大)@Vgs

-

上升时间

40 ns

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

Vf-正向电压

2.2 V

产品类别

Discrete Semiconductor Modules