ROHM Semiconductor DTA114TEFRATL

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Package/Enclosure

SOT-363

Power dissipation Pd

150mW

Collector-emitter maximum voltage VCEO

50V,-50V

Collector continuous current

100mA,-100mA

Collector-emitter saturation voltage

300mV,-300mV

DC current gain hFE

68,68

Characteristic frequency fT

250MHz,250MHz

R1

47K/47K Ohms

R2

47K/47K Ohms

Package Description

SC-75A, 3 PIN

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Transition Frequency-Nom (fT)

250 MHz

Manufacturer Part Number

DTA114TEFRATL

Package Shape

RECTANGULAR

Manufacturer

ROHM 半导体

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ROHM CO LTD

Risk Rank

5.49

Operating temperature

-55℃~150℃

ECCN 代码

EAR99

附加功能

内置偏置电阻

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

配置

SINGLE WITH BUILT-IN RESISTOR

fet type

NPN/PNP

晶体管应用

SWITCHING

极性/通道类型

PNP

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

100

集电极-发射器电压-最大值

50 V