ROHM Semiconductor DTA114YEFRATL
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DTA114YEFRATL
2078-DTA114YEFRATL
晶体管 - 双极性晶体管(BJT)- 单个
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DTA114YEFRATL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at utmel
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DTA114YEFRATL详情
ROHM Semiconductor DTA114YEFRATL重要参数规格及、参数值,及相似型号如下:
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生命周期状态
Production (Last Updated: 2 years ago)
底架
表面贴装
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
Package/Enclosure
DO-214AC
Reverse breakdown voltage Vbr
33.3V
Reverse working voltage Vrwm
30V
Clamping voltage Vc
48.4V
Peak pulse current Ipp
8.3A
RoHS
Non-Compliant
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Transistor Polarity
Single PNP
Package Description
SC-75A, 3 PIN
Package Style
小概要
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Transition Frequency-Nom (fT)
250 MHz
Manufacturer Part Number
DTA114YEFRATL
Package Shape
RECTANGULAR
Manufacturer
ROHM 半导体
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROHM CO LTD
Risk Rank
1.78
Operating temperature
-65℃~150℃
ECCN 代码
EAR99
附加功能
BUILT IN BIAS RESISTANCE RATIO IS 4.7
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
参考标准
AEC-Q101
JESD-30代码
R-PDSO-G3
极性
PNP
配置
SINGLE WITH BUILT-IN RESISTOR
功率耗散
150mW
晶体管应用
SWITCHING
极性/通道类型
PNP
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
68
连续集电极电流
100mA
集电极-发射器电压-最大值
50 V
DTA114YEFRATL拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor







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