ROHM Semiconductor DTA114YUAFRAT106

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Peak pulse current Ipp

15A

Reverse working voltage Vrwm

3.6V

Clamping voltage Vc

4.8V

Reverse breakdown voltage Vbr

6.8V

Package/Enclosure

SOD962

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Transistor Polarity

Single PNP

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Transition Frequency-Nom (fT)

250 MHz

Manufacturer Part Number

DTA114YUAFRAT106

Package Shape

RECTANGULAR

Manufacturer

ROHM 半导体

Number of Elements

1

Part Life Cycle Code

不推荐

Ihs Manufacturer

ROHM CO LTD

Risk Rank

7.18

Operating temperature

-40℃~125℃

ECCN 代码

EAR99

附加功能

BUILT IN BIAS RESISTANCE RATIO IS 4.7

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

配置

SINGLE WITH BUILT-IN RESISTOR

功率耗散

200mW

晶体管应用

SWITCHING

极性/通道类型

PNP

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

68

连续集电极电流

100mA

集电极-发射器电压-最大值

50 V