ROHM Semiconductor DTC114YE
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DTC114YE
2078-DTC114YE
晶体管 - 双极性晶体管(BJT)- 单个
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大陆
立即发货

Description: Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
1最小包装量--
DTC114YE详情
ROHM Semiconductor DTC114YE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
synthetic polyolefin
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
ROHM CO LTD
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Transition Frequency-Nom (fT)
250 MHz
Diameter of protected wire (cable)
95…175 mm
Diameter before shrinkage
180 mm
Diameter after shrinkage
90.0 mm
Wall thickness before shrinkage
0.7 mm
Wall thickness after shrinkage
1.56 mm
Shrinkage temperature
+70…+120 °C
Gross weight
421.67
Transportation packaging size/quantity
102*20*20/30
包装
in packs cut into 1 m pieces
JESD-609代码
e1
无铅代码
有
ECCN 代码
EAR99
类型
Adhesive-free heat shrink tubing
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
颜色
black
附加功能
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
HTS代码
8541.21.00.75
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
10
JESD-30代码
R-PDSO-G3
资历状况
不合格
配置
SINGLE WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
NPN
Operating temperature range
-55…+125 °C
最大耗散功率(Abs)
0.15 W
Shrinkage ratio
2 : 1
集电极电流-最大值(IC)
0.07 A
最小直流增益(hFE)
68
集电极-发射器电压-最大值
50 V
环境耗散-最大值
0.15 W
Operating voltage
600 V
DTC114YE拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor







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