ROHM Semiconductor DTC123EEFRATL

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Package/Enclosure

SOT-416

Power dissipation Pd

150mW

Collector-emitter maximum voltage VCEO

-50V

Collector continuous current

-100mA

Collector-emitter saturation voltage

-300mV

DC current gain hFE

30

Characteristic frequency fT

250MHz

R1

4.7K Ohms

R2

4.7K Ohms

Typical Resistor Ratio

1

Package Type

EMT

Typical Input Resistor

2.2

Collector Current (DC)

0.1(A)

Emitter-Collector Voltage (Max)

50(V)

DC Current Gain

20

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Transistor Polarity

Single NPN

Package Description

SC-75A, 3 PIN

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Transition Frequency-Nom (fT)

250 MHz

Manufacturer Part Number

DTC123EEFRATL

Package Shape

RECTANGULAR

Manufacturer

ROHM 半导体

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ROHM CO LTD

Risk Rank

1.56

Operating temperature

-55℃~150℃

包装

卷带

ECCN 代码

EAR99

类型

NPN

附加功能

BUILT IN BIAS RESISTANCE RATIO IS 1

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

配置

Single

功率耗散

0.15(W)

fet type

PNP

晶体管应用

SWITCHING

极性/通道类型

NPN

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

20

连续集电极电流

100mA

集电极-发射器电压-最大值

50 V