ROHM Semiconductor DTC124EEFRATL

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Package/Enclosure

SOT-416

Power dissipation Pd

150mW

Collector-emitter maximum voltage VCEO

-50V

Collector continuous current

-100mA

Collector-emitter saturation voltage

-300mV

DC current gain hFE

100

Characteristic frequency fT

250MHz

VEBO

-5V

VCBO

-50V

R1

10K Ohms

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Transistor Polarity

Single NPN

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Transition Frequency-Nom (fT)

250 MHz

Manufacturer Part Number

DTC124EEFRATL

Package Shape

RECTANGULAR

Manufacturer

ROHM 半导体

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ROHM CO LTD

Risk Rank

5.58

Operating temperature

-55℃~150℃

ECCN 代码

EAR99

附加功能

BUILT IN BIAS RESISTANCE RATIO IS 1

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

配置

SINGLE WITH BUILT-IN RESISTOR

功率耗散

150mW

fet type

PNP

晶体管应用

SWITCHING

极性/通道类型

NPN

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

56

连续集电极电流

100mA

集电极-发射器电压-最大值

50 V