ROHM Semiconductor MCR10F24R9E
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MCR10F24R9E
2078-MCR10F24R9E
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TO-92-3 Kinked Lead
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MCR10F24R9E datasheet pdf and Unclassified product details from ROHM Semiconductor stock available at utmel
1最小包装量--
MCR10F24R9E详情
ROHM Semiconductor MCR10F24R9E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3 Kinked Lead
Emitter- Base Voltage VEBO
4 V
Pd - Power Dissipation
625 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
50
Collector-Emitter Saturation Voltage
250 mV
Unit Weight
0.008466 oz
Minimum Operating Temperature
-
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Gain Bandwidth Product fT
100 MHz
Part # Aliases
KSP05TA_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
500 mA
RoHS
Details
Collector- Emitter Voltage VCEO Max
60 V
系列
KSP05
包装
弹药包
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
60 V
连续集电极电流
0.5 A
产品类别
Bipolar Transistors - BJT
宽度
3.93 mm
高度
4.7 mm
长度
4.7 mm
MCR10F24R9E拓展信息







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