ROHM Semiconductor MCR10F24R9E

包装/外壳

TO-92-3 Kinked Lead

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

625 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

50

Collector-Emitter Saturation Voltage

250 mV

Unit Weight

0.008466 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

100 MHz

Part # Aliases

KSP05TA_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Maximum DC Collector Current

500 mA

RoHS

Details

Collector- Emitter Voltage VCEO Max

60 V

系列

KSP05

包装

弹药包

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

60 V

连续集电极电流

0.5 A

产品类别

Bipolar Transistors - BJT

宽度

3.93 mm

高度

4.7 mm

长度

4.7 mm