ROHM Semiconductor UMD12NFHATR

工厂交货时间

13 Weeks

包装/外壳

SOT-363-6

表面安装

YES

终端数量

6

晶体管元件材料

SILICON

Package/Enclosure

SOT-23

Power dissipation Pd

200mW

Collector-emitter maximum voltage VCEO

-50V

Collector continuous current

-100mA

Collector-emitter saturation voltage

-300mV

DC current gain hFE

80

Characteristic frequency fT

250MHz

R1

4.7K Ohms

R2

47K Ohms

Package

Tape & Reel (TR)

Base Product Number

UMD12

厂商

Rohm Semiconductor

Product Status

活跃

Qualification

-

Transistor Polarity

NPN and PNP Complement

Typical Resistor Ratio

1

Pd - Power Dissipation

150 mW

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

68

Typical Input Resistor

47 kOhms

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Maximum Operating Frequency

250 MHz

RoHS

Details

Package Description

SMALL OUTLINE, R-PDSO-G6

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

10

Rohs Code

有

Transition Frequency-Nom (fT)

250 MHz

Manufacturer Part Number

UMD12NFHATR

Package Shape

RECTANGULAR

Number of Elements

2

Part Life Cycle Code

活跃

Ihs Manufacturer

ROHM CO LTD

Risk Rank

4.13

Operating temperature

-55℃~150℃

系列

*

包装

MouseReel

JESD-609代码

e2

ECCN 代码

EAR99

端子表面处理

Tin/Copper (Sn/Cu)

附加功能

BUILT IN BIAS RESISTANCE RATIO IS 1.0

子类别

Transistors

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G6

输出电压

100 mV, -100 mV

配置

Dual

功率耗散

150mW

fet type

PNP

晶体管应用

SWITCHING

极性/通道类型

NPN和PNP

产品类别

BJTs - Bipolar Transistors - Pre-Biased

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

68

连续集电极电流

100mA

集电极-发射器电压-最大值

50 V