参数名
参数值
参数名
参数值
安装类型
底座安装
包装/外壳
Module
供应商器件包装
-
Vr - Reverse Voltage
1200 V
Vds - Drain-Source Breakdown Voltage
1200 VDC
Typical Turn-On Delay Time
58 ns
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 7 V, + 22 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
SanRex
Brand
SanRex
Tradename
SanRex - Techno Block
Rds On - Drain-Source Resistance
6.8 mOhms
RoHS
Details
Typical Turn-Off Delay Time
121 ns
Id - Continuous Drain Current
100 A
Package
Tray
Current - Continuous Drain (Id) @ 25℃
100A (Tc)
厂商
SanRex Corporation
Product Status
活跃
系列
FCA
包装
Tray
操作温度
-40°C ~ 150°C (TJ)
类型
SiC MOSFET Module
子类别
Discrete Semiconductor Modules
技术
SiC
输出电流
100 A
功率 - 最大
625W (Tc)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
14mOhm @ 100A, 20V
不同 Id 时 Vgs(th)(最大值)
5V @ 3mA
输入电容(Ciss)(Max)@Vds
17200pF @ 20V
门极电荷(Qg)(最大)@Vgs
-
上升时间
33 ns
漏源电压 (Vdss)
1200V (1.2kV)
产品类别
Discrete Semiconductor Modules
场效应管特性
Silicon Carbide (SiC)
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules