参数名
参数值
参数名
参数值
安装类型
底座安装
包装/外壳
Module
供应商器件包装
-
Vr - Reverse Voltage
1200 V
Vds - Drain-Source Breakdown Voltage
1200 VDC
Typical Turn-On Delay Time
66 ns
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
1135 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 7 V, + 22 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
SanRex
Brand
SanRex
Tradename
SanRex - Techno Block
Rds On - Drain-Source Resistance
4.1 mOhms
RoHS
Details
Typical Turn-Off Delay Time
114 ns
Id - Continuous Drain Current
150 A
Package
Tray
Current - Continuous Drain (Id) @ 25℃
150A (Tc)
厂商
SanRex Corporation
Product Status
活跃
系列
FCA
包装
Tray
操作温度
-40°C ~ 150°C (TJ)
类型
SiC MOSFET Module
子类别
Discrete Semiconductor Modules
技术
SiC
输出电流
150 A
功率 - 最大
1135W (Tc)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
9.3mOhm @ 150A, 20V
不同 Id 时 Vgs(th)(最大值)
5V @ 4.5mA
输入电容(Ciss)(Max)@Vds
25300pF @ 20V
门极电荷(Qg)(最大)@Vgs
-
上升时间
36 ns
漏源电压 (Vdss)
1200V (1.2kV)
产品类别
Discrete Semiconductor Modules
场效应管特性
Silicon Carbide (SiC)
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules