参数名
参数值
参数名
参数值
包装/外壳
SOT-363-6
Emitter- Base Voltage VEBO
6 V, 5 V
Pd - Power Dissipation
225 mW
Transistor Polarity
NPN, PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
100
Collector-Emitter Saturation Voltage
750 mV
Unit Weight
0.000280 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
250 MHz, 200 MHz
Manufacturer
Panjit
Brand
Panjit
Maximum DC Collector Current
600 mA
DC Current Gain hFE Max
300
RoHS
Details
Collector- Emitter Voltage VCEO Max
40 V
系列
DT-03TS
包装
MouseReel
子类别
Transistors
技术
Si
配置
Dual
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
60 V, 40 V
连续集电极电流
- 600 mA, 600 mA
产品类别
Bipolar Transistors - BJT