参数名
参数值
参数名
参数值
包装/外壳
TO-39-3
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
800 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
100 at 100 mA, 5 V
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
30
Mounting Styles
通孔
Gain Bandwidth Product fT
400 MHz
Manufacturer
TT Electronics
Brand
Semelab / TT Electronics
Maximum DC Collector Current
1 A
DC Current Gain hFE Max
300 at 100 mA, 5 V
Collector- Emitter Voltage VCEO Max
80 V
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
80 V
产品类别
Bipolar Transistors - BJT
宽度
9.4 mm
高度
6.6 mm
长度
9.4 mm