Seme LAB IRF230

包装/外壳

TO-3

RoHS

Non-Compliant

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

35 ns

Pd - Power Dissipation

75 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

TT Electronics

Brand

Semelab / TT Electronics

Rds On - Drain-Source Resistance

400 mOhms

Typical Turn-Off Delay Time

60 ns

Id - Continuous Drain Current

9 A

系列

IRF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

80 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET