SemiQ GP2T080A120H

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4

厂商

SemiQ

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Power Dissipation (Max)

188W (Tc)

Base Product Number

GP2T080A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Depletion

Manufacturer

SemiQ

Brand

SemiQ

Qg - Gate Charge

61 nC

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

35 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 20A, 20V

不同 Id 时 Vgs(th)（最大值）

4V @ 10mA

输入电容(Ciss)(Max)@Vds

1377 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

61 nC @ 20 V

上升时间

4 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+25V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET