Sensata Technologies 7854-18-60

包装/外壳

SOIC-8

Vds - Drain-Source Breakdown Voltage

20 V

Moisture Sensitive

有

Typical Turn-On Delay Time

9 ns, 9 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

2 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.019048 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

10 S, 10 S

Channel Mode

Enhancement

Part # Aliases

BSO27PHXT SP000613832 BSO207PHXUMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

16 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

32 mOhms, 32 mOhms

RoHS

Details

Typical Turn-Off Delay Time

33 ns, 33 ns

Id - Continuous Drain Current

5.7 A

系列

OptiMOS P

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

上升时间

22 ns, 22 ns

产品类别

MOSFET

晶体管类型

2 P-Channel

产品类别

MOSFET

宽度

3.9 mm

高度

1.75 mm

长度

4.9 mm