Shandong Jingdao Microelectronics BC857B
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BC857B
1604-BC857B
晶体管 - 双极性晶体管(BJT)- 单个
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65V 200mW 475@2mA,5V 100mA PNP SOT-23 Bipolar (BJT) ROHS
1最小包装量--
BC857B详情
Shandong Jingdao Microelectronics BC857B重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Collector-Emitter Breakdown Voltage (Vceo)
65V
Power Dissipation (Pd)
200mW
DC Current Gain (hFE@Ic,Vce)
475@2mA,5V
Collector Current (Ic)
100mA
Transition Frequency (fT)
100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
500mV@100mA,5mA
Package
Tape & Reel (TR)
操作温度
-65℃~+150℃@(Tj)
晶体管类型
PNP
BC857B拓展信息
Shandong Jingdao Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
WPMtek(Wei Pan Microelectronics)
WPMtek(Wei Pan Microelectronics)
Micro Electronics Corporation
Micro Electronics Ltd
Microsemi Corporation
Microsemi Corporation








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