Sharp Microelectronics PC81712NSZ1B

RoHS

Details

Mounting Styles

通孔

Current Transfer Ratio-Min

100 %

If - Forward Current

10 mA

Maximum Collector Emitter Voltage

80 V

Maximum Collector Current

2 mA

Maximum Collector Emitter Saturation Voltage

0.2 V

Fall Time

18 us

Pd - Power Dissipation

170 mW

Minimum Operating Temperature

- 30 C

Maximum Operating Temperature

+ 100 C

Factory Pack QuantityFactory Pack Quantity

5000

Vr - Reverse Voltage

6 V

包装

切割胶带

输出类型

NPN Phototransistor

通道数量

1 Channel

上升时间

18 us

隔离电压

5000 Vrms

电流传输比（最大）

600 %

电流传输比

100 %

Vf-正向电压

1.4 V