Siemens US2:32DUCA92N1V2C

包装/外壳

TO-126-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

12.5 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

40

Collector-Emitter Saturation Voltage

500 mV

Unit Weight

0.026843 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

1920

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Part # Aliases

BD13916STU_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Maximum DC Collector Current

1.5 A

DC Current Gain hFE Max

250

RoHS

Details

Collector- Emitter Voltage VCEO Max

80 V

系列

BD139

包装

Tube

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

80 V

连续集电极电流

1.5 A

产品类别

Bipolar Transistors - BJT

宽度

3.25 mm

高度

1.5 mm

长度

8 mm