参数名
参数值
参数名
参数值
包装/外壳
PowerPAK SO-8
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
7 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
29.4 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
30 S
Channel Mode
Enhancement
Manufacturer
Vishay
Brand
Vishay Semiconductors
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
32 mOhms
RoHS
Details
Typical Turn-Off Delay Time
19 ns
Id - Continuous Drain Current
24 A
包装
Reel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
7 ns
产品类别
MOSFET
产品类别
MOSFET