STMicroelectronics 5962F8870601VXA

工厂交货时间

30 Weeks

表面安装

YES

终端数量

20

ECCN (US)

EAR99

HTS

8542.39.00.01

Logic Family

AC

Number of Elements per Chip

1

Number of Channels per Chip

8

Standard Package Name

FPAK

Supplier Package

CFPAK

Mounting

表面贴装

Package Height

2.21(Max)

Package Length

13.08(Max)

Package Width

7.24(Max)

PCB changed

20

Lead Shape

Flat

Supplier Temperature Grade

Military

Maximum Operating Temperature (°C)

125

Minimum Operating Temperature (°C)

-55

Maximum Power Dissipation (mW)

500

Propagation Delay Test Condition (pF)

50

Maximum Quiescent Current (uA)

80

Maximum Operating Supply Voltage (V)

6

Typical Operating Supply Voltage (V)

5|2.5|3.3

Minimum Operating Supply Voltage (V)

2

Maximum High Level Output Current (mA)

-50

Maximum Low Level Output Current (mA)

50

Input Signal Type

Single-Ended

Process Technology

CMOS

Absolute Propagation Delay Time (ns)

15

Maximum Propagation Delay Time @ Maximum CL (ns)

[email protected]|10@3V

Bus Hold

无

Number of Output Enables per Chip

2 Low

Number of Outputs per Chip

8

Number of Input Enables per Chip

0

Number of Inputs per Chip

8

Package Style

FLATPACK

Load Capacitance (CL)

50 pF

Package Body Material

CERAMIC

Package Equivalence Code

FL20,.3

Operating Temperature-Min

-55 °C

Operating Temperature-Max

125 °C

Rohs Code

有

Manufacturer Part Number

5962F8870601VXA

Package Code

DFP

Package Shape

RECTANGULAR

Manufacturer

STMicroelectronics

Part Life Cycle Code

活跃

Ihs Manufacturer

STMICROELECTRONICS

Risk Rank

5.47

Prop.

10 ns

Usage Level

Military grade

包装

Strip

JESD-609代码

e0

零件状态

活跃

端子表面处理

Tin/Lead (Sn/Pb)

HTS代码

8542.39.00.01

子类别

Bus Driver/Transceiver

技术

CMOS

端子位置

DUAL

终端形式

FLAT

功能数量

1

端子间距

1.27 mm

Reach合规守则

compliant

引脚数量

20

JESD-30代码

R-XDFP-F20

资历状况

Qualified

输出类型

3-State

极性

Non-Inverting

电源

3.3/5 V

温度等级

MILITARY

比特数

8

逻辑功能

Buffer/Line Driver

输出特性

3-STATE

输出极性

TRUE

逻辑IC类型

总线驱动器

最大 I(ol)

0.012 A

筛选水平

38535V;38534K;883S

控制类型

低电平

总剂量

300k Rad(Si) V