STMicroelectronics NAND512W3M2AZC5E
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NAND512W3M2AZC5E
2381-NAND512W3M2AZC5E
集成电路(IC)
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NAND512W3M2AZC5E datasheet pdf and Integrated Circuits (ICs) product details from STMicroelectronics stock available at utmel
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NAND512W3M2AZC5E详情
STMicroelectronics NAND512W3M2AZC5E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
137
Manufacturer Part Number
NAND512W3M2AZC5E
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
BGA
Package Description
10.50 X 13 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, LFBGA-137
Risk Rank
7.77
Number of Words
33554432 words
Number of Words Code
32000000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-30 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LFBGA
Package Equivalence Code
BGA137,10X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH
Supply Voltage-Nom (Vsup)
3 V
Reflow Temperature-Max (s)
40
附加功能
LPSDRAM IS ORGANISED AS 16M X 32
HTS代码
8542.32.00.71
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.8 mm
Reach合规守则
compliant
引脚数量
137
JESD-30代码
R-PBGA-B137
资历状况
不合格
电源电压-最大值(Vsup)
3.6 V
电源
3 V
温度等级
商业扩展
电源电压-最小值(Vsup)
2.5 V
操作模式
ASYNCHRONOUS
组织结构
32MX8
座位高度-最大
1.4 mm
内存宽度
8
记忆密度
268435456 bit
内存IC类型
存储器电路
混合内存类型
FLASH+SDRAM
长度
13 mm
宽度
10.5 mm
NAND512W3M2AZC5E拓展信息
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