STMicroelectronics STL260N4LF7

安装类型

表面贴装

包装/外壳

PowerFLAT5x6-8

供应商器件包装

PowerFlat™ (5x6)

Continuous Drain Current Id

120

MSL

MSL 1 - Unlimited

Qualification

-

Number of Elements per Chip

1

Package Type

PowerFLAT 5 x 6

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

21 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002681 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

1.1 mOhms

RoHS

Details

Typical Turn-Off Delay Time

74 ns

Id - Continuous Drain Current

120 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

STMicroelectronics

Power Dissipation (Max)

188W (Tc)

Product Status

活跃

系列

STL260N

包装

切割胶带

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率耗散

188

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.1mOhm @ 25A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

6000 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

42 nC @ 4.5 V

上升时间

14 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET