STMicroelectronics STP70NS04ZC

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

Package

Tube

Base Product Number

STP70

Current - Continuous Drain (Id) @ 25℃

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

180W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

33 V

Qualification

AEC-Q101

Pd - Power Dissipation

180 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Rds On - Drain-Source Resistance

11 mOhms

RoHS

Details

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

11mOhm @ 40A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

1930 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

58 nC @ 10 V

漏源电压 (Vdss)

33 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET