SUMITOMO ELECTRIC Industries Ltd EGN21C160I2D
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EGN21C160I2D
2388-EGN21C160I2D
晶体管 - 特殊用途
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大陆
立即发货

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PIN
1最小包装量--
EGN21C160I2D详情
SUMITOMO ELECTRIC Industries Ltd EGN21C160I2D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
2
晶体管元件材料
氮化镓
Part Life Cycle Code
活跃
Ihs Manufacturer
SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description
FLANGE MOUNT, R-CDFM-F2
Number of Elements
1
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
附加功能
HIGH RELIABILITY
端子位置
DUAL
终端形式
FLAT
Reach合规守则
unknown
引脚数量
2
JESD-30代码
R-CDFM-F2
资历状况
不合格
配置
SINGLE
操作模式
DEPLETION MODE
箱体转运
SOURCE
晶体管应用
AMPLIFIER
极性/通道类型
N-CHANNEL
DS 击穿电压-最小值
160 V
场效应管技术
高电子迁移率
最高频段
S带
EGN21C160I2D拓展信息
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Device Innovations Inc







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