参数名
参数值
参数名
参数值
生命周期状态
Production (Last Updated: 2 years ago)
安装类型
通孔
包装/外壳
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
供应商器件包装
TO-92
Package
Tape & Box (TB)
Current-Collector (Ic) (Max)
100 mA
厂商
Taiwan Semiconductor Corporation
Product Status
Obsolete
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
RoHS
Compliant
Number of Elements per Chip
1
Dimensions
5.1 x 4.1 x 4.7mm
Package Type
TO-92
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Voltage
65 V
Maximum DC Collector Current
100 mA
Minimum DC Current Gain
110
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
500 mW
Transistor Polarity
NPN
Collector-Emitter Saturation Voltage
-
Unit Weight
0.016000 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
4000
Mounting Styles
通孔
Gain Bandwidth Product fT
-
Part # Aliases
BC546A
Manufacturer
台湾半导体
Brand
台湾半导体
Collector- Emitter Voltage VCEO Max
65 V
Rohs Code
有
Manufacturer Part Number
BC546AA1
Part Life Cycle Code
活跃
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
Risk Rank
5.58
操作温度
-65°C ~ 150°C (TJ)
系列
-
包装
弹药包
子类别
Transistors
技术
Si
Reach合规守则
compliant
引脚数量
3
极性
NPN
配置
Single
功率 - 最大
500 mW
产品类别
BJTs - Bipolar Transistors
晶体管类型
NPN
最小直流增益(hFE)@ Ic, Vce
110 @ 2mA, 5V
最大集极截止电流
15nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
-
电压 - 集射极击穿(最大值)
65 V
频率转换
-
集电极基极电压(VCBO)
80 V
产品类别
Bipolar Transistors - BJT