Taiwan Semiconductor TSM043NB04CZ C0G

包装/外壳

TO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

124 A

Rds On - Drain-Source Resistance

4.3 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

74 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

2 W

Channel Mode

Enhancement

Fall Time

49 ns

Factory Pack QuantityFactory Pack Quantity

4000

Typical Turn-Off Delay Time

45 ns

Typical Turn-On Delay Time

17 ns

Part # Aliases

TSM043NB04CZ

Unit Weight

0.068784 oz

包装

Tube

类型

N-Channel Power MOSFET

配置

Single

通道数量

1 Channel

上升时间

74 ns

晶体管类型

1N-Channel

产品

MOSFET

高度

4.44 mm

长度

15.37 mm

宽度

10.16 mm