Taiwan Semiconductor TSM051N04LCP ROG

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252, (D-Pak)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

TSM051

Current - Continuous Drain (Id) @ 25℃

16A (Ta), 96A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Taiwan Semiconductor Corporation

Power Dissipation (Max)

2.6W (Ta), 89W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Vds - Drain-Source Breakdown Voltage

40 V

Moisture Sensitive

有

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

89 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

38 S

Channel Mode

Enhancement

Part # Aliases

TSM051N04LCP

Manufacturer

台湾半导体

Brand

台湾半导体

Qg - Gate Charge

44.5 nC

Rds On - Drain-Source Resistance

4.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

23 ns

Id - Continuous Drain Current

96 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

切割胶带

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.1mOhm @ 16A, 10V

输入电容(Ciss)(Max)@Vds

2456 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

44.5 nC @ 10 V

上升时间

16 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

N-Channel

场效应管特性

-

产品类别

MOSFET