Taiwan Semiconductor TSM4ND65CI C0G

包装/外壳

ITO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

4 A

Rds On - Drain-Source Resistance

2.6 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

16.8 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

41.6 W

Channel Mode

Enhancement

Fall Time

25 ns

Factory Pack QuantityFactory Pack Quantity

4000

Typical Turn-Off Delay Time

17 ns

Typical Turn-On Delay Time

6 ns

Part # Aliases

TSM4ND65CI

Unit Weight

0.211644 oz

包装

Tube

系列

TSM4ND65CI

配置

Single

通道数量

1 Channel

上升时间

19 ns

晶体管类型

1 N-Channel