Taiwan Semiconductor TSM60N750CP

包装/外壳

TO-252-3

Manufacturer

TAIWAN SEMICONDUCTOR

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

17.3 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

62.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

TSM60N750CP R0G

Brand

台湾半导体

Qg - Gate Charge

10.8 nC

Rds On - Drain-Source Resistance

530 mOhms

RoHS

Details

Typical Turn-Off Delay Time

28 ns

Id - Continuous Drain Current

6 A

包装

TO-252 (D-PAK)

电容量

Ciss - 554pF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

电压

VDS - 600V

上升时间

22 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET