Taiwan Semiconductor TSM60N900CH

包装/外壳

TO-251-3

Package

Case

厂商

Autec 电力系统

Product Status

活跃

Voltage-Input

100 ~ 240 VAC

Manufacturer

TAIWAN SEMICONDUCTOR

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1875

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

TSM60N900CH C5G

Brand

台湾半导体

Qg - Gate Charge

9.7 nC

Rds On - Drain-Source Resistance

720 mOhms

RoHS

Details

Typical Turn-Off Delay Time

22 ns

Id - Continuous Drain Current

4.5 A

系列

DT036A (36W)

包装

TO-251 (I-PAK)

应用

ITE (Commercial)

功率(瓦特)

36 W

电容量

Ciss - 480pF

子类别

MOSFETs

技术

Si

效率

六级

配置

Single

通道数量

1 Channel

电压

VDS - 600V

最大输出电流

2.66A

电压 - 输出

13.5V

上升时间

16 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

表格

Desktop

输出连接器

Barrel Plug, 2.5mm I.D. x 5.5mm O.D.

产品类别

MOSFET