Taiwan Semiconductor TSM60N900CP

包装/外壳

TO-252-3

Package

Bulk

Base Product Number

KJ6T1

厂商

ITT Cannon, LLC

Product Status

活跃

Manufacturer

TAIWAN SEMICONDUCTOR

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

TSM60N900CP R0G

Brand

台湾半导体

Qg - Gate Charge

9.7 nC

Rds On - Drain-Source Resistance

720 mOhms

RoHS

Details

Typical Turn-Off Delay Time

22 ns

Id - Continuous Drain Current

4.5 A

系列

*

包装

TO-252 (D-PAK)

电容量

Ciss - 480pF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

电压

VDS - 600V

上升时间

16 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET