Taiwan Semiconductor TSM60NB190CI

包装/外壳

TO-220-3

Manufacturer

TAIWAN SEMICONDUCTOR

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

36 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

33.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Brand

台湾半导体

Qg - Gate Charge

31 nC

Rds On - Drain-Source Resistance

170 mOhms

RoHS

Details

Typical Turn-Off Delay Time

95 ns

Id - Continuous Drain Current

18 A

包装

ITO-220

电容量

Ciss - 1273pF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

电压

VDS - 600V

上升时间

21 ns

产品类别

MOSFET

产品类别

MOSFET