参数名
参数值
参数名
参数值
包装/外壳
SOT-363-6
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
250 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
200
Collector-Emitter Saturation Voltage
200 mV
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
18000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
250 MHz
Part # Aliases
SP000746922 BC846SH6327XT BC846SH6327XTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Maximum DC Collector Current
100 mA
DC Current Gain hFE Max
450
RoHS
Details
Collector- Emitter Voltage VCEO Max
65 V
系列
BC846
包装
MouseReel
子类别
Transistors
技术
Si
配置
Dual
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
80 V
连续集电极电流
100 mA
产品类别
Bipolar Transistors - BJT