TE Connectivity CZ3295-000

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

6.5 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

53 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

5.1 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

17 nC

Tradename

QFET

Rds On - Drain-Source Resistance

175 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

11.4 A

系列

FQP11P06

包装

Tube

类型

MOSFET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

40 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm