TE Connectivity YDTS20F21-75SA0000

包装/外壳

TO-220AB-3

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

34 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

156 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IRF840BPBF

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

30 nC

Rds On - Drain-Source Resistance

850 mOhms

RoHS

Details

Typical Turn-Off Delay Time

26 ns

Id - Continuous Drain Current

8.7 A

系列

IRF

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

32 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET