TE Connectivity YDTS20G21-41SNV001

包装/外壳

PowerPAK-SO-8

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

56 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.017870 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

SI7374DP-E3

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

122 nC

Tradename

TrenchFET

Rds On - Drain-Source Resistance

5.5 mOhms

RoHS

Details

Id - Continuous Drain Current

24 A

系列

SI7

包装

Reel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET