参数名
参数值
参数名
参数值
包装/外壳
SOT-323-3
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
3.8 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
280 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
SI1330EDL-T1-E3
Manufacturer
Vishay
Brand
Vishay / Siliconix
Qg - Gate Charge
400 pC
Tradename
TrenchFET
Rds On - Drain-Source Resistance
2.5 Ohms
RoHS
Details
Typical Turn-Off Delay Time
12.8 ns
Id - Continuous Drain Current
250 mA
系列
SI1
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
4.8 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET