Torex Semiconductor Ltd XP231P02013R-G
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XP231P02013R-G
2539-XP231P02013R-G
晶体管 - FET,MOSFET - 单个
SC-70, SOT-323
大陆
立即发货

MOSFET P-CH 30V 200MA SOT323-3
1最小包装量--
XP231P02013R-G详情
Torex Semiconductor Ltd XP231P02013R-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SC-70, SOT-323
安装类型
表面贴装
供应商器件包装
SOT-323-3A
Base Product Number
XP231
厂商
Torex Semiconductor Ltd
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.2V @ 250μA
Power Dissipation (Max)
350mW (Ta)
MSL
MSL 1 - Unlimited
Qualification
-
Continuous Drain Current Id
200mA
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
18 ns
Vgs th - Gate-Source Threshold Voltage
500 mV
Pd - Power Dissipation
350 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Torex Semiconductor
Brand
Torex Semiconductor
Qg - Gate Charge
-
Rds On - Drain-Source Resistance
5 Ohms
RoHS
Details
Typical Turn-Off Delay Time
80 ns
Id - Continuous Drain Current
200 mA
系列
-
操作温度
150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
350mW
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
5Ohm @ 100mA, 4.5V
输入电容(Ciss)(Max)@Vds
34 pF @ 10 V
上升时间
20 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±8V
产品类别
MOSFET
晶体管类型
1 P-Channel
信道型
P Channel
场效应管特性
-
产品类别
MOSFET
XP231P02013R-G拓展信息
Torex Semiconductor Ltd
Torex Semiconductor Ltd
Torex Semiconductor Ltd
Torex Semiconductor Ltd
Torex Semiconductor Ltd
Torex
Torex Semiconductor
Torex Semiconductor
Torex Semiconductor
Torex Semiconductor







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