2SA1587-GR,LF(T详情
Toshiba 2SA1587-GR,LF(T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
引脚数
3
终端数量
3
晶体管元件材料
SILICON
Collector Current (DC)
0.1(A)
Collector-Base Voltage
120(V)
Emitter-Base Voltage
5(V)
Mounting
表面贴装
Operating Temperature Classification
Military
Operating Temp Range
-55C to 125C
Rad Hardened
无
Package Type
USM
Category
双极小信号
Transistor Polarity
PNP
DC Current Gain
200
Number of Elements
1
Qualification
-
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
125 °C
Transition Frequency-Nom (fT)
100 MHz
Manufacturer Part Number
2SA1587-GR,LF(T
Package Shape
RECTANGULAR
Manufacturer
东芝美国电子元器件
Part Life Cycle Code
活跃
Ihs Manufacturer
TOSHIBA CORP
Risk Rank
1.51
包装
卷带
附加功能
低噪音
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
unknown
频率
100(MHz)
JESD-30代码
R-PDSO-G3
配置
Single
功率耗散
0.1(W)
输出功率
Not Required(W)
晶体管应用
AMPLIFIER
极性/通道类型
PNP
转换频率
100MHz
最大耗散功率(Abs)
0.1 W
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
200
连续集电极电流
100mA
集电极-发射器电压-最大值
120 V
VCEsat-最大值
0.3 V
环境耗散-最大值
0.1 W
2SA1587-GR,LF(T拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage









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